it is a leader in LED technology

The CEO of Azzurro Semiconductors, Erwin Wolf said “This license and transfer agreement is a big step for the commercialization of LEDs produced on silicon substrates. Our technology will enable manufacturers to use silicon fabs to produce LEDs on 150 mm, and in future also on 200 mm silicon substrates. We are very glad to work with Osram Opto Semiconductors, since it is a leader in LED technology.”

Azzurro, which specializes in the growth of gallium nitride (GaN) on silicon substrates, has licensed and transferred its process technology for GaN-on-Si growth to Osram Opto Semiconductors. Having pioneered the growth of GaN on silicon substrates using metalorganic vapour phase epitaxy (MOVPE), Azzurro is currently providing its customers worldwide with GaN-on-Si epiwafers for LED and high-voltage applications. Azzurro says that its unique capability to grow very thick (8 micron) high-quality GaN on silicon substrates (currently 150 mm) is expected to enable cost breakthroughs for high-brightness LEDs and GaN-based high-voltage devices.

The individual LED pods contain 15 LEDs and are fully potted. Each led high bay light has a red and black lead for 12 or 24 volt power. Two different aluminum billet mount styles are available with either chrome or black anodize finish. The first mount has a flat mounting surface, while the tubular mount style has a concave base for mounting on bars, rails and other round stock. The LED light models measure approximately 5 inches long and 1 inch wide, while the single LED light is under 2 inches in length.